Title :
160°C CW operation of InGaAs/GaAs vertical cavity surface emitting lasers
Author :
Shoji, Hajime ; Otsubo, K. ; Matsuda, Manabu ; Ishikawa, Hiroshi
Author_Institution :
Optoelectron. Res. Div., Fujitsu Labs. Ltd., Atsugi
fDate :
3/3/1994 12:00:00 AM
Abstract :
A CW operation temperature of 160°C is demonstrated in InGaAs/GaAs double quantum well vertical cavity surface emitting lasers (VCSELs). The effect of offset-gain is considered in the design, and wet chemical etching is employed for forming the mesa structure to reduce surface recombination. A low threshold current of 5.2 mA is achieved at 160°C
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; semiconductor lasers; 160 C; 5.2 mA; CW operation; CW operation temperature; InGaAs-GaAs; InGaAs/GaAs vertical cavity surface emitting lasers; design; double quantum well vertical cavity surface emitting lasers; low threshold current; mesa structure; offset-gain; surface recombination; wet chemical etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940265
