• DocumentCode
    1039812
  • Title

    Photogenerated carrier sweep-out times in strained InxGa 1-xAs/InyAl1-yAs quantum well modulators

  • Author

    Moss, David J. ; Ido, T. ; Sano, Hiroyasu

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo
  • Volume
    30
  • Issue
    5
  • fYear
    1994
  • fDate
    3/3/1994 12:00:00 AM
  • Firstpage
    405
  • Lastpage
    406
  • Abstract
    The authors propose and demonstrate the use of compressively strained barriers to reduce photogenerated carrier sweep-out times in In xGa1-xAs/InyAl1-yAs multiquantum well modulators, designed for λ=1.55 μm
  • Keywords
    III-V semiconductors; aluminium compounds; crosstalk; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical modulation; semiconductor quantum wells; 1.55 mum; InxGa1-xAs/InyAl1-yAs quantum well modulators; InGaAs-InAlAs; compressively strained barriers; electroabsorption optical modulators; multiquantum well modulators; photogenerated carrier sweep-out times;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940281
  • Filename
    273268
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1039812