Title :
Photogenerated carrier sweep-out times in strained InxGa 1-xAs/InyAl1-yAs quantum well modulators
Author :
Moss, David J. ; Ido, T. ; Sano, Hiroyasu
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo
fDate :
3/3/1994 12:00:00 AM
Abstract :
The authors propose and demonstrate the use of compressively strained barriers to reduce photogenerated carrier sweep-out times in In xGa1-xAs/InyAl1-yAs multiquantum well modulators, designed for λ=1.55 μm
Keywords :
III-V semiconductors; aluminium compounds; crosstalk; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical modulation; semiconductor quantum wells; 1.55 mum; InxGa1-xAs/InyAl1-yAs quantum well modulators; InGaAs-InAlAs; compressively strained barriers; electroabsorption optical modulators; multiquantum well modulators; photogenerated carrier sweep-out times;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940281
