LSA operation of a gallium arsenide device in microstrip

Two LSA microstrip oscillators were made. The poor performance of the first oscillator was found by a time-domain computer simulation to be caused by poor circuit design and the effects of the LSA device package. A second circuit was constructed which eliminated the device package and used a more straightforward design. Thirty watts of RF power was generated in the second circuit at a frequency of 1.96 GHz, with an efficiency of 12.5 percent.