Title :
High-Power V-Band InGaAs/InP Photodiodes
Author :
Qiugui Zhou ; Cross, A.S. ; Beling, Andreas ; Yang Fu ; Zhiwen Lu ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
InGaAs/InP-modified uni-traveling carrier photodiodes with cliff layer were designed and fabricated for V-band (50-75 GHz) applications. The devices were flip-chip bonded on AlN submounts for efficient heat dissipation. A high-impedance transmission line was designed to compensate for the parasitic capacitance and enhance the bandwidth. Devices with 3-dB bandwidths of 50 and 65 GHz demonstrated high-output RF power of 20.3 and 15.9 dBm, respectively.
Keywords :
III-V semiconductors; bonding processes; cooling; flip-chip devices; gallium arsenide; indium compounds; photodiodes; InGaAs-InP; V-band applications; V-band photodiodes; cliff layer; flip-chip bonding; frequency 50 GHz to 75 GHz; heat dissipation; high-impedance transmission line; parasitic capacitance; uni-traveling carrier photodiodes; Bandwidth; Indium gallium arsenide; Indium phosphide; Photodiodes; Power generation; Radio frequency; Transmission line measurements; Indium gallium arsenide; indium phosphide; photodetector; photodiodes (PDs);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2013.2253766
