Transit-time negative conductance in GaAs bulk-effect diodes

Author

Yu, Se Puan ; Tantraporn, Wirojana ; Young, John D.

Author_Institution

General Electric Research and Development Center, Schenectady, N. Y.

Volume

18

Issue

2

fYear

1971

fDate

2/1/1971 12:00:00 AM

Firstpage

88

Lastpage

93

Abstract

It is well known that GaAs bulk-effect devices generate RF power by velocity-modulating the charge carriers. We have found through a small-signal analysis and computer simulations that RF power could also be generated by density modulation of the carriers if the diode is subcritically doped ( $n_{0}L< 5\\times10^{11}$ cm^-2) and carrier injection at the cathode is limited to appropriate values. This second power-generating mechanism is transit-time dependent and is optimum when the transit angle is approximately 3π/2. Under optimum conditions, when the two power-generating mechanisms are combined, the device efficiency exceeds what is predicted by the static velocity-electric field characteristic. Computer results indicate that for sinusoidal operation a peak-to-valley current ratio of 3 to 1 is achievable for an intrinsic peak-to-valley velocity ratio of 2.5 to 1. Experimental and computed results agree qualitatively.

Keywords

Absorption; Cathodes; Charge carrier density; Computer simulation; Diodes; Dynamic range; Energy barrier; Gallium arsenide; Radio frequency; Temperature control;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1971.17154

Filename

1476476