• DocumentCode
    1039934
  • Title

    Noise behavior of Schottky barrier gate field-effect transistors at microwave frequencies

  • Author

    Baechtold, Werner

  • Author_Institution
    IBM Zürich Research Laboratory, Rüschlikon, Switzerland
  • Volume
    18
  • Issue
    2
  • fYear
    1971
  • fDate
    2/1/1971 12:00:00 AM
  • Firstpage
    97
  • Lastpage
    104
  • Abstract
    The noise behavior of a Schottky barrier gate field-effect transistor is investigated by the use of the noise equivalent circuit. The influence of the carrier velocity saturation is estimated. The noise parameters are calculated by taking into account the influence of parasitic resistances. Measured and calculated noise parameters show good agreement in the frequency range 2-8 GHz.
  • Keywords
    1f noise; Acoustical engineering; Circuit noise; Equivalent circuits; FETs; Low-frequency noise; MESFETs; Microwave frequencies; Microwave transistors; Schottky barriers;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1971.17156
  • Filename
    1476478
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1039934