• DocumentCode
    1040102
  • Title

    Lumped modeling of optical generation in nonuniformly doped semiconductors

  • Author

    Brugler, J. Stephen

  • Author_Institution
    Stanford University, Stanford, Calif.
  • Volume
    18
  • Issue
    3
  • fYear
    1971
  • fDate
    3/1/1971 12:00:00 AM
  • Firstpage
    195
  • Lastpage
    199
  • Abstract
    When carrier density is normalized and recombination neglected, a single transport element accounts for both drift and diffusion. Optical generation is modeled by discrete current sources, and expressions for lumped elements are obtained in terms of integrals of the doping profile. Good physical intuition with respect to the effect of the profile on photocurrent transport is obtained, and analytical calculation of device quantum efficiency is facilitated.
  • Keywords
    Charge carrier density; Doping profiles; Equations; Photoconductivity; Phototransistors; Radiative recombination; Semiconductor device doping; Semiconductor devices; Semiconductor impurities; Semiconductor process modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1971.17173
  • Filename
    1476495
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1040102