Analysis of semiconductor diodes with multifrequency input signal

In this paper a closed form expression for the intermodulation output power from a semiconductor diode driven by an arbitrary number of "small-level" input signals is obtained. The effect of the intrinsic resistance of the diode material is taken into consideration through the use of the modified exponential function for the diode characteristic. It has been found that the relative harmonic distortion depends on the bias voltage, which agrees with the experimental observations. This dependence would not have been obtained had the intrinsic resistance been neglected. Also, the calculated intermodulation output power shows good agreement, for small input signal, with the published experimental results.