DocumentCode :
1040354
Title :
Base diffusion isolated transistors for low power integrated circuits
Author :
Senhouse, L.S., Jr. ; Kushler, D.L. ; Murphy, B.T.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
Volume :
18
Issue :
6
fYear :
1971
fDate :
6/1/1971 12:00:00 AM
Firstpage :
355
Lastpage :
358
Abstract :
Base diffusion isolated transistors (BDI) designed for low power, nonsaturating, integrated circuits have been fabricated. Buried collectors are unnecessary in these low power devices, resulting in structures equivalent to discrete transistors in complexity of fabrication. A low-current power supply is required for isolation purposes. Transistor characteristics differ negligibly from those of standard transistors at collector currents <0.05 mA, and are satisfactory for application in linear circuits at currents up to at least 0.1 mA. Transistor fTis 80 MHz at 0.1 mA emitter current, 2 V collector voltage.
Keywords :
Bipolar transistor circuits; Capacitance; Contact resistance; Epitaxial layers; Fabrication; Linear circuits; Power integrated circuits; Power supplies; Production facilities; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1971.17201
Filename :
1476523
Link To Document :
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