Title :
Base diffusion isolated transistors for low power integrated circuits
Author :
Senhouse, L.S., Jr. ; Kushler, D.L. ; Murphy, B.T.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
fDate :
6/1/1971 12:00:00 AM
Abstract :
Base diffusion isolated transistors (BDI) designed for low power, nonsaturating, integrated circuits have been fabricated. Buried collectors are unnecessary in these low power devices, resulting in structures equivalent to discrete transistors in complexity of fabrication. A low-current power supply is required for isolation purposes. Transistor characteristics differ negligibly from those of standard transistors at collector currents <0.05 mA, and are satisfactory for application in linear circuits at currents up to at least 0.1 mA. Transistor fTis 80 MHz at 0.1 mA emitter current, 2 V collector voltage.
Keywords :
Bipolar transistor circuits; Capacitance; Contact resistance; Epitaxial layers; Fabrication; Linear circuits; Power integrated circuits; Power supplies; Production facilities; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1971.17201