DocumentCode :
1040420
Title :
Static negative resistance in Gunn effect materials with field-dependent carrier diffusion
Author :
Hauge, P.S.
Volume :
18
Issue :
6
fYear :
1971
fDate :
6/1/1971 12:00:00 AM
Firstpage :
390
Lastpage :
391
Abstract :
A numerical study of the equations governing the electric field in Gunn effect materials under constant bias shows that static negative resistance (SNR) can occur as a bulk effect when certain conditions regarding carrier diffusion are satisfied. This result places an important limitation on Shockley´s positive conductance theorem in that a completely general extension of the theorem to cases where diffusion is field dependent cannot exist.
Keywords :
Circuits; Conducting materials; Electric resistance; Geometry; Gunn devices; Impurities; Mathematical analysis; Permittivity; Poisson equations; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1971.17209
Filename :
1476531
Link To Document :
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