• DocumentCode
    1040433
  • Title

    Temperature dependence of breakdown voltage in silicon abrupt p-n junctions

  • Author

    Chang, C.Y. ; Chiu, S.S.

  • Volume
    18
  • Issue
    6
  • fYear
    1971
  • fDate
    6/1/1971 12:00:00 AM
  • Firstpage
    391
  • Lastpage
    393
  • Abstract
    Temperature dependence of breakdown voltage in silicon abrupt p+-n junctions has been calculated using a modified Baraff theory [1]-[3] and measured experimentally from 77°K to 500°K, with substrate doping from 1015cm-3to 1018cm-3. Experimental data are in good agreement with the results of theoretical calculations. These results strongly substantiate the validity of the modified Baraff theory which has been pointed out by Sze and Crowell.
  • Keywords
    Anodes; Cathodes; Current density; Electron mobility; Gallium arsenide; P-n junctions; Piecewise linear approximation; Piecewise linear techniques; Silicon; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1971.17210
  • Filename
    1476532
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1040433