Temperature dependence of breakdown voltage in silicon abrupt p-n junctions

Temperature dependence of breakdown voltage in silicon abrupt p⁺-n junctions has been calculated using a modified Baraff theory [1]-[3] and measured experimentally from 77°K to 500°K, with substrate doping from 10¹⁵cm^-3to 10¹⁸cm^-3. Experimental data are in good agreement with the results of theoretical calculations. These results strongly substantiate the validity of the modified Baraff theory which has been pointed out by Sze and Crowell.