DocumentCode
1040684
Title
The epi channel switch
Author
Johnson, Brant T.
Author_Institution
General Telephone and Electronics Laboratories, Waltham, Mass.
Volume
18
Issue
8
fYear
1971
fDate
8/1/1971 12:00:00 AM
Firstpage
525
Lastpage
527
Abstract
The processing steps to build and the operation of a novel complementary device structure are discussed. The device achieves both a six times improvement in
figure of merit by a 2.5-to-1 reduction in channel length and a packing density on the order of 1 × 105gates/in2as a result of its vertical construction.
figure of merit by a 2.5-to-1 reduction in channel length and a packing density on the order of 1 × 105gates/in2as a result of its vertical construction.Keywords
Conductivity; Control systems; Impedance; Impurities; Inverters; Logic circuits; Microscopy; Nanoscale devices; Switches; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1971.17236
Filename
1476558
Link To Document