Title :
Thermal effects in the bias circuit frequency modulation of Gunn oscillators
Author :
DeSa, B.A.E. ; Hobson, Geoffrey S.
Author_Institution :
University of Sheffield, Sheffield, England
fDate :
8/1/1971 12:00:00 AM
Abstract :
Observations have been made of the relation between temperature and bias-induced frequency variations of CW X-band Gunn oscillators. The results indicate that a large part of the frequency modulation through the bias circuit at modulation frequencies below approximately 1 MHz can be caused by modulation of the device temperature. Other modulation processes also occur.
Keywords :
Circuits; Diodes; Energy storage; Frequency modulation; Gunn devices; Oscillators; Phase modulation; Radio frequency; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1971.17241
