Title :
The cascode JFET as a means to avoid excess gate current
fDate :
8/1/1971 12:00:00 AM
Abstract :
This correspondence reports on the optimal design of a cascode JFET to achieve high transconductance and low gate current.
Keywords :
Conductivity; Electrical resistance measurement; Equivalent circuits; FET integrated circuits; Impact ionization; Inspection; Transconductance; Virtual manufacturing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1971.17248
