Miniaturized 40–60 GHz On-Chip Balun With Capacitive Loading Compensation

Author

Kaixue Ma ; Ningning Yan ; Kiat Seng Yeo ; Wei Meng Lim

Author_Institution

EEE Sch., Nanyang Technol. Univ., Singapore, Singapore

Volume

35

Issue

4

fYear

2014

fDate

Apr-14

Firstpage

434

Lastpage

436

Abstract

A millimeter-wave balun by using the broadside-coupled transmission lines and capacitive loading compensation is proposed and investigated. The balun is designed and verified by using a commercial SiGe BiCMOS technology. The measured results show that in the frequency range of 40-60 GHz, the amplitude mismatching and absolute phase error are less than 0.2 dB and 2.7°, respectively. The compact size of the balun is only 200 μm × 180 μm including grounding shield.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; baluns; field effect MMIC; transmission lines; BiCMOS technology; SiGe; absolute phase error; amplitude mismatching; broadside-coupled transmission lines; capacitive loading compensation; frequency 40 GHz to 60 GHz; grounding shield; on-chip balun; size 180 mum; size 200 mum; BiCMOS integrated circuits; Capacitors; Impedance matching; Metals; Power transmission lines; Substrates; Transmission line measurements; RFIC; SiGe BiCMOS; balun; capacitive loading compensation (CLC); millimeter-wave; multilayer; pattern ground;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2304612

Filename

6740839