Resonant tunneling diodes as sources for millimeter and submillimeter wavelengths

Author

Bouregba, R. ; Vanbesien, O. ; Mounaix, Patrick ; Lippens, Didier ; Palmateer, L. ; Pernot, J.C. ; Beaudin, G. ; Encrenaz, P. ; Bockenhoff, E. ; Nagle, J. ; Bois, P. ; Chevoir, F. ; Vinter, B.

Author_Institution

Dept. Hyperfrequences et Semicond., Univ. des Sci. & Technol., Villeneuve d´´Ascq, France

Volume

41

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2025

Lastpage

2027

Abstract

High quality resonant tunneling diodes have been fabricated and tested as sources for millimeter and submillimeter wavelengths. The devices have shown excellent I-V characteristics with peak-to-valley current ratios as high as 6:1 and current densities in the range of 50-150 kA/cm² at 300 K. Used as local oscillators, the diodes are capable of state of the art output power delivered by AlGaAs-based tunneling devices. As harmonic multipliers, a frequency of 320 GHz has been achieved by quintupling the fundamental oscillation of a klystron source

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; microwave generation; microwave oscillators; multiplying circuits; resonant tunnelling devices; solid-state microwave devices; submillimetre wave devices; tunnel diode oscillators; tunnel diodes; 300 K; 320 GHz; AlGaAs; AlGaAs-based tunneling devices; GaAs-AlAs; I-V characteristics; current densities; fundamental oscillation frequency quintupling; harmonic multipliers; local oscillators; millimeter wave source; output power; peak-to-valley current ratios; resonant tunneling diodes; submillimeter wave source; Diodes; Frequency; Gallium arsenide; Local oscillators; Microwave devices; Microwave technology; Millimeter wave devices; Resonance; Resonant tunneling devices; Substrates;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.273430

Filename

273430