Title :
Comments, with reply, on "Mechanisms determining third-order intermodulation distortion in AlGaAs/GaAs heterojunction bipolar transistors" by A. Samelis and D. Pavlidis
Author :
Maas, S.A. ; Nelson, B. ; Tait, D.
Author_Institution :
Nonlinear Consulting, Long Beach, CA, USA
Abstract :
The commenters maintain that the above-titled paper by A. Samelis and D, Pavlidis (ibid., vol.40, no.12, p.2374, Dec. 1992) seriously misrepresents their own work (ibid., vol.40, no.3, p.442, Mar. 1992), and they provide arguments countering the two statements to which they object. The original authors rebut the commenters´ arguments.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; intermodulation; semiconductor device models; solid-state microwave devices; AlGaAs-GaAs; AlGaAs/GaAs heterojunction bipolar transistors; HBT; model; third-order intermodulation distortion; Capacitance; FETs; Frequency; Gallium arsenide; Heterojunctions; Intermodulation distortion; Microwave devices; Microwave technology; Microwave theory and techniques; Testing;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
