Title :
Integration of n- and p-channel InGaP=InGaAs doped-channel pseudomorphic HFETs
Author :
Tsai, J.H. ; Li, C.-M. ; Liu, W.C. ; Guo, D.F. ; Chiu, S.Y. ; Lour, W.S.
Author_Institution :
Nat. Kaohsiung Normal Univ., Kaohsiung
Abstract :
n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs on the identical chip by selectively etching process are first demonstrated. Particularly, the saturation voltage of the n-channel device is relatively small because 2DEG is formed and modulated in the InGaAs strain channel. Experimentally, an extrinsic transconductance of 292 (72) mS/mm and a saturation current density of 335 (-270) mA/mm are obtained for the n-channel (p-channel) device. Furthermore, the integrated devices exhibit broad gate voltage swings for linear and signal amplifier applications.
Keywords :
III-V semiconductors; high electron mobility transistors; semiconductor doping; extrinsic transconductance; n-channel doped-channel pseudomorphic HFETs; p-channel doped-channel pseudomorphic HFETs; saturation current density; strain channel;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070621
