Experimental and 2D simulation study of the single-event burnout in N-channel power MOSFETs

Author

Roubaud, Franck ; Dachs, Charles ; Palau, Jean-Marie ; Gasiot, Jean ; Tastet, Pierre

Author_Institution

Centre d´´Electron. de Montpellier, Univ. Montpellier II, France

Volume

40

Issue

6

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

1952

Lastpage

1958

Abstract

The use of the 2D simulator MEDICI as a tool for single event burnout (SEB) comprehension is investigated. Simulation results are compared to experimental currents induced in an N channel power MOSFET by the ions from a ²⁵²Cf source. Current measurements have been carried out using a specially designed circuit. Simulations make it possible to analyze separately the effects of the ion impact and the electrical environment parameters on the SEB phenomenon. Burnout sensitivity is found to be increased by increasing supply voltage and ion linear energy transfer (LET), and by decreasing load charge. These electrical tendencies are confirmed by experiments. Burnout sensitivity is also found to be sensitive to the ion impact position. The current shape variations for given electrical parameters can be related to LET or ion impact position changes. However, some experimental current shapes are not reproduced by simulations

Keywords

digital simulation; insulated gate field effect transistors; ion beam effects; power transistors; semiconductor device models; 2D simulation study; ²⁵²Cf source; MEDICI; N-channel power MOSFETs; burnout sensitivity; current shape variations; electrical environment parameters; ion beam effects; ion impact; ion linear energy transfer; load charge; single-event burnout; supply voltage; Analytical models; Circuit simulation; Current measurement; Discrete event simulation; Energy exchange; MOSFET circuits; Medical simulation; Power MOSFET; Shape; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.273458

Filename

273458