Title :
Single-event current transients induced by high energy ion microbeams
Author :
Nashiyama, Isamu ; Hirao, Takami ; Kamiya, Toshio ; Yutoh, Hidenori ; Nishijima, Toshiji ; Sekiguti, Hiroyoshi
Author_Institution :
Japan Atomic Energy Res. Inst., Takasaki, Gunma, Japan
fDate :
12/1/1993 12:00:00 AM
Abstract :
Focused high-energy ion microbeams were applied to the study of the basic mechanisms of single-event upset. Waveforms of the current transients induced by He-, C-, O- and Fe-ion strikes on silicon diodes were measured by applying extremely low beam currents of an order of 10 fA and a wide-bandwidth digitizing sampling technique. Total collected charges are evaluated from the transient currents as a function of LET (linear energy transfer), bias voltage, and doping level, and are compared with theoretical values calculated using conventional single-event models. It is found that irradiation effects on the total collected charges can be explained by the introduction of displacement atoms calculated using Coulomb potential and the Kinchin-Pease model
Keywords :
elemental semiconductors; ion beam effects; semiconductor device models; semiconductor diodes; silicon; transients; 10 fA; Coulomb potential; Kinchin-Pease model; LET; bias voltage; current transients; displacement atoms; doping level; high energy ion microbeams; irradiation effects; linear energy transfer; low beam currents; silicon diodes; single-event upset; transient currents; wide-bandwidth digitizing sampling technique; Bandwidth; Circuits; Current measurement; Energy measurement; Oscilloscopes; Position measurement; Sampling methods; Semiconductor diodes; Silicon; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
