• DocumentCode
    104114
  • Title

    Partitioning Electrostatic and Mechanical Domains in Nanoelectromechanical Relays

  • Author

    Shavezipur, Mohammad ; Harrison, Kimberly ; Lee, William Scott ; Mitra, Subhasish ; Wong, H.-S Philip ; Howe, Roger T.

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • Volume
    24
  • Issue
    3
  • fYear
    2015
  • fDate
    Jun-15
  • Firstpage
    592
  • Lastpage
    598
  • Abstract
    This paper describes the improvement of pull-in stability, contact properties, and reliability of laterally actuated nanoelectromechanical relays by partitioning the mechanical and electrostatic domains in the relay structure. Separation of the two physics allows us to individually optimize the structural stiffness and the actuation voltage to increase the contact pressure and reduce the ON-state resistance without applying excessive drain voltage. The devices can tolerate more than 200% overdrive gate voltage, resulting in near 100% increase in contact force, and reducing the contact resistance from ~10 GQ to ~23 KΩ. For a given overall device dimension, tailoring the mechanical and electrostatic elements independently also enables us to control the pull-in and pull-out voltages, which have different design requirements for different applications. The measurement results show that the pull-in/pull-out hysteresis could vary between 30% and 60% of the actuation (pull-in) voltage. Increasing the mechanical force without affecting the device actuation voltage improves the relay reliability by reducing the possibility of failure due to source-drain stiction when the relay is switched ON. As a proof of concept, mechanical relays are fabricated using polycrystalline silicon coated by a titanium nitride layer deposited via plasma enhanced atomic layer deposition.
  • Keywords
    contact resistance; hysteresis; nanoactuators; relays; actuation voltage; contact force; contact pressure; contact property; contact resistance; drain voltage; electrostatic domain partitioning; hysteresis; laterally actuated nanoelectromechanical relay reliability; mechanical domain partitioning; mechanical force; on-state resistance; overdrive gate voltage; pull-in stability; pull-in voltage; pull-out voltage; Electrodes; Electrostatics; Force; Hysteresis; Logic gates; Relays; Resistance; Nanoelectromechanical systems; contact reliability; laterally actuated relay; low power electronics; partitioning; partitioning electrostatic-structural domains;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/JMEMS.2014.2335157
  • Filename
    6861954