DocumentCode
104114
Title
Partitioning Electrostatic and Mechanical Domains in Nanoelectromechanical Relays
Author
Shavezipur, Mohammad ; Harrison, Kimberly ; Lee, William Scott ; Mitra, Subhasish ; Wong, H.-S Philip ; Howe, Roger T.
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Volume
24
Issue
3
fYear
2015
fDate
Jun-15
Firstpage
592
Lastpage
598
Abstract
This paper describes the improvement of pull-in stability, contact properties, and reliability of laterally actuated nanoelectromechanical relays by partitioning the mechanical and electrostatic domains in the relay structure. Separation of the two physics allows us to individually optimize the structural stiffness and the actuation voltage to increase the contact pressure and reduce the ON-state resistance without applying excessive drain voltage. The devices can tolerate more than 200% overdrive gate voltage, resulting in near 100% increase in contact force, and reducing the contact resistance from ~10 GQ to ~23 KΩ. For a given overall device dimension, tailoring the mechanical and electrostatic elements independently also enables us to control the pull-in and pull-out voltages, which have different design requirements for different applications. The measurement results show that the pull-in/pull-out hysteresis could vary between 30% and 60% of the actuation (pull-in) voltage. Increasing the mechanical force without affecting the device actuation voltage improves the relay reliability by reducing the possibility of failure due to source-drain stiction when the relay is switched ON. As a proof of concept, mechanical relays are fabricated using polycrystalline silicon coated by a titanium nitride layer deposited via plasma enhanced atomic layer deposition.
Keywords
contact resistance; hysteresis; nanoactuators; relays; actuation voltage; contact force; contact pressure; contact property; contact resistance; drain voltage; electrostatic domain partitioning; hysteresis; laterally actuated nanoelectromechanical relay reliability; mechanical domain partitioning; mechanical force; on-state resistance; overdrive gate voltage; pull-in stability; pull-in voltage; pull-out voltage; Electrodes; Electrostatics; Force; Hysteresis; Logic gates; Relays; Resistance; Nanoelectromechanical systems; contact reliability; laterally actuated relay; low power electronics; partitioning; partitioning electrostatic-structural domains;
fLanguage
English
Journal_Title
Microelectromechanical Systems, Journal of
Publisher
ieee
ISSN
1057-7157
Type
jour
DOI
10.1109/JMEMS.2014.2335157
Filename
6861954
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