Title :
Numerical analysis of single event burnout of power MOSFETs
Author :
Kuboyama, Satoshi ; Matsuda, Shodai ; Nakajima, Masato ; Kanno, Tooru ; Ishii, Takayuki
Author_Institution :
Nat. Space Dev. Agency of Japan, Tsukuba-shi, Ibaraki-ken, Japan
fDate :
12/1/1993 12:00:00 AM
Abstract :
The single event burnout (SEB) phenomenon of power MOSFETs has been analyzed using a numerical device simulator code. It is found that the vertical current along the ion track directly indices the forward bias state of the source/p-body junction. It is also found that the current is governed by the conductivity of the plasma column. For the second peak of the EPICS spectra, a position-independent charge collection mechanism was also explained by the vertical current along the ion track. Experimental data obtained with EPICS (energetic particle induced charge spectroscopy) were explained clearly. It was found that the avalanche multiplication was caused by the distortion of neutrality of the plasma column around the p-body/drain junction. Under the strong avalanche multiplication condition, it could be regenerative. The existence of QTH in EPICS spectra may be explained by the mechanism. The influence of the penetration range of the incident ions is discussed
Keywords :
digital simulation; impact ionisation; insulated gate field effect transistors; ion beam effects; power transistors; semiconductor device models; EPICS spectra; avalanche multiplication; energetic particle induced charge spectroscopy; forward bias state; ion track; numerical device simulator code; penetration range; plasma column; power MOSFETs; single event burnout; source/p-body junction; vertical current; Analytical models; Conductivity; Discrete event simulation; MOSFETs; Numerical analysis; Numerical simulation; Plasma devices; Plasma simulation; Plasma sources; Spectroscopy;
Journal_Title :
Nuclear Science, IEEE Transactions on
