Single event induced charge transport modeling of GaAs MESFETs

Author

Weatherford, T.R. ; McMorrow, D. ; Curtice, W.R. ; Knudson, A.R. ; Campbell, A.B.

Author_Institution

SFA Inc., Landover, MD, USA

Volume

40

Issue

6

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

1867

Lastpage

1871

Abstract

Two-dimensional computer simulations of charge collection phenomena in GaAs MESFETs have been performed for alpha and laser ionization. In both cases, more charge is collected than is created by the ionizing event. The simulations indicate that a bipolar transport mechanism (t<60 ps) and a channel modulation mechanism (t>40 ps) are responsible for this enhanced charge collection. The first mechanism is a bipolar type effect that injects charge into the bulk of the device and is collected at the drain due to the electric field. The second is a back channel turn-on mechanism that is associated with a positive hole density located beneath the channel and exists on a much longer time scale. These results show that electrons supplied by the source implant are responsible for charge collected at the drain in excess of any collected deposited charge

Keywords

III-V semiconductors; Schottky gate field effect transistors; alpha-particle effects; carrier density; gallium arsenide; laser beam effects; α-particle effects; 2D computer simulations; GaAs MESFETs; back channel turn-on mechanism; bipolar transport mechanism; bipolar type effect; channel modulation mechanism; charge collection phenomena; charge transport modeling; electric field; ionizing event; laser ionization; positive hole density; source implant; Analytical models; Computer simulation; Contracts; Electrons; Gallium arsenide; Implants; Ionization; Laboratories; Laser modes; MESFETs;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.273468

Filename

273468