• DocumentCode
    1041216
  • Title

    The influence of heavy doping on the emitter efficiency of a bipolar transistor

  • Author

    De Man, Hugo J J

  • Author_Institution
    University of California, Berkeley, Calif.
  • Volume
    18
  • Issue
    10
  • fYear
    1971
  • fDate
    10/1/1971 12:00:00 AM
  • Firstpage
    833
  • Lastpage
    835
  • Abstract
    The emitter efficiency current gain βγis calculated taking into account the effect of the bandgap decrease caused by heavy doping of the emitter. It is found that this effect reduces the emitter efficiency and explains experimental results on the temperature dependence of the current gain. It also predicts an optimum emitter doping for a given base doping.
  • Keywords
    Atomic measurements; Bipolar transistors; Charge carrier processes; Doping profiles; Electron emission; Helium; Impurities; Neodymium; Photonic band gap; Semiconductor process modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1971.17291
  • Filename
    1476613
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1041216