Title :
The latchup risk of CMOS-technology in space
Author :
Moreau, Yves ; De la Rochette, Hélène ; Bruguier, Guy ; Gasiot, Jean ; Pélanchon, Frédéric ; Sudre, Christophe ; Ecoffet, Robert
Author_Institution :
Centre d´´Electron. de Montpellier, France
fDate :
12/1/1993 12:00:00 AM
Abstract :
The use of CMOS technology in space requires the careful evaluation of the latchup risk. The radiation tolerance of a standard 1.0 μm high density technology and its hardened variants is studied. The internal currents and densities are read through dynamic two/three dimensional device simulations, performed on a complete description of the CMOS inverter cell and a simulated heavy ion strike. An evaluation of the capture cross section versus the ion energy is derived from the statistical distribution of ion tracks through the structure
Keywords :
CMOS integrated circuits; circuit analysis computing; integrated circuit technology; ion beam effects; radiation hardening (electronics); semiconductor device models; 1 micron; CMOS inverter cell; CMOS technology; capture cross section; dynamic 2D simulation; dynamic 3D simulation; high density technology; internal currents; ion track statistical distribution; latchup risk; radiation hardening; radiation tolerance; simulated heavy ion strike; space; CMOS process; CMOS technology; Computational modeling; Doping profiles; Epitaxial layers; Inverters; MOS devices; Medical simulation; Space technology; Substrates;
Journal_Title :
Nuclear Science, IEEE Transactions on
