DocumentCode
1041247
Title
Total dose failures in advanced electronics from single ions
Author
Oldham, T.R. ; Bennett, K.W. ; Beaucour, J. ; Carriere, T. ; Polvey, C. ; Garnier, P.
Author_Institution
US Army Res. Lab., Adelphi, MD, USA
Volume
40
Issue
6
fYear
1993
fDate
12/1/1993 12:00:00 AM
Firstpage
1820
Lastpage
1830
Abstract
Hard errors from single heavy ions have been reported in advanced commercial CMOS memories. The authors examine the physical interactions of ions with MOS gate oxides-charge generation, recombination, transport, and trapping. They also consider device and circuit characteristics. They conclude that hard errors from single ions are to be expected, and should not be considered surprising
Keywords
CMOS integrated circuits; DRAM chips; SRAM chips; integrated circuit testing; ion beam effects; radiation hardening (electronics); CMOS memories; DRAMs; MOS gate oxides; SRAM cell; charge generation; charge recombination; charge transport; charge trapping; circuit characteristics; hard errors; physical ion interactions; single heavy ions; total dose failure; Annealing; CMOS memory circuits; Circuit testing; Error analysis; Laboratories; Latches; MOS devices; Random access memory; Temperature sensors; Threshold voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.273474
Filename
273474
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