Title :
Total dose failures in advanced electronics from single ions
Author :
Oldham, T.R. ; Bennett, K.W. ; Beaucour, J. ; Carriere, T. ; Polvey, C. ; Garnier, P.
Author_Institution :
US Army Res. Lab., Adelphi, MD, USA
fDate :
12/1/1993 12:00:00 AM
Abstract :
Hard errors from single heavy ions have been reported in advanced commercial CMOS memories. The authors examine the physical interactions of ions with MOS gate oxides-charge generation, recombination, transport, and trapping. They also consider device and circuit characteristics. They conclude that hard errors from single ions are to be expected, and should not be considered surprising
Keywords :
CMOS integrated circuits; DRAM chips; SRAM chips; integrated circuit testing; ion beam effects; radiation hardening (electronics); CMOS memories; DRAMs; MOS gate oxides; SRAM cell; charge generation; charge recombination; charge transport; charge trapping; circuit characteristics; hard errors; physical ion interactions; single heavy ions; total dose failure; Annealing; CMOS memory circuits; Circuit testing; Error analysis; Laboratories; Latches; MOS devices; Random access memory; Temperature sensors; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
