Three-dimensional numerical simulation of single event upset of an SRAM cell

Author

Woodruff, R.L. ; Rudeck, P.J.

Author_Institution

United Technol. Microelectron. Center, Colorado Springs, CO, USA

Volume

40

Issue

6

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

1795

Lastpage

1803

Abstract

Charge collection mechanisms in PMOS and NMOS transistors irradiated by single energetic ions and the corresponding response of an SRAM (static random-access memory) cell have been simulated. For an ion track through a p-channel, the RC network within the cell and the strength of the n-channel pull-down device will limit the amount of charge collected. In the case of the n-channel pull-down device, the direction of the ion strike (toward or away from the source) plays a major role in the upset of the cell. An ion path toward the source upsets at a lower LET (linear energy transfer) than one away from the source. This is the result of additional electrons injected from the source due to barrier lowering

Keywords

CMOS integrated circuits; SPICE; SRAM chips; insulated gate field effect transistors; ion beam effects; semiconductor device models; 1.2 micron; 3D numerical simulation; CMOS technology; LET; NMOS transistors; PISCES; PMOS transistors; RC network; SEU response; SPICE circuit analysis; SRAM cell; barrier lowering; charge collection mechanisms; energetic ion irradiation; ion strike direction; ion track; linear energy transfer; n-channel pull-down device; single event upset; Active appearance model; Analytical models; Circuit analysis; Circuit simulation; Numerical simulation; Particle tracking; Random access memory; SPICE; Single event upset; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.273477

Filename

273477