DocumentCode
1041355
Title
Temperature dependent GaAs MMIC radiation effects
Author
Anderson, W.T. ; Gerdes, J. ; Roussos, J.A.
Author_Institution
US Naval Res. Lab., Washington, DC, USA
Volume
40
Issue
6
fYear
1993
fDate
12/1/1993 12:00:00 AM
Firstpage
1735
Lastpage
1739
Abstract
The temperature dependence of pulsed neutron and flash X-ray radiation effects was studied in GaAs MMICs (monolithic microwave integrated circuits). Above room temperature the long-term current transients are dominated by electron trapping in previously existing defects. At low temperatures in the range 126 to 259 K, neutron-induced lattice damage appears to play an increasingly important role in producing long-term current transients
Keywords
III-V semiconductors; MMIC; X-ray effects; electron traps; gallium arsenide; integrated circuit testing; neutron effects; transients; -147 to 150 degC; GaAs; GaAs MMICs; electron trapping; flash X-ray irradiation; long-term current transients; neutron-induced lattice damage; pulsed neutron irradiation; temperature dependence; Electron traps; Gallium arsenide; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Neutrons; Pulse circuits; Radiation effects; Temperature dependence; Temperature distribution;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.273485
Filename
273485
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