• DocumentCode
    1041369
  • Title

    The P-channel refractory metal self-registered MOSFET

  • Author

    Brown, Dale M. ; Cady, William R. ; Sprague, James W. ; Salvagni, Peter J.

  • Author_Institution
    General Electric Company, Schenectady, N. Y.
  • Volume
    18
  • Issue
    10
  • fYear
    1971
  • fDate
    10/1/1971 12:00:00 AM
  • Firstpage
    931
  • Lastpage
    940
  • Abstract
    In this paper p-channel self-registered Mo gate MOSFET fabrication techniques are described and tested. Excellent p-channel devices resulted. Device characteristics including junction characteristics, threshold, stability, effective channel mobilities, and Si-SiO2interface studies are examined and compared with theoretical predictions. Simple processing steps yielded FETs whose threshold is predictably controlled by the intrinsic properties of Mo and the Si-SiO2system. Effective mobility theory matches the data at low fields, but at high fields theory predicts values that are too low. Similarly constructed integrated circuits are T2L compatible with excellent threshold reproducibility and exhibit stability during accelerated temperature-bias life testing.
  • Keywords
    Automatic testing; Circuit stability; Control systems; FETs; Fabrication; Integrated circuit yield; Life estimation; Life testing; MOSFET circuits; Reproducibility of results;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1971.17307
  • Filename
    1476629
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1041369