Three-point method of prediction of MOS device response in space environments

Author

Pershenkov, V.S. ; Belyakov, V.V. ; Cherepko, S.V. ; Shvetzov-Shilovsky, I.N.

Author_Institution

Dept. of Microelectron., Moscow Phys. Eng. Inst., Russia

Volume

40

Issue

6

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

1714

Lastpage

1720

Abstract

A method for low-dose-rate MOS device response prediction based on the linear dependence between positive oxide charge anneal and interface states build-up is presented and experimentally verified. A linear relationship is seen to exist between the build-up of slow interface states and oxide trapped hole annealing. The physical explanation of the correlation between the number of trapped holes annealed and the number of interface states generated can be given in both hydrogen and trapped hole conversion models on a phenomenological basis. It is suggested that there is a one-to-K_Oi relationship (where K_Oi is some phenomenological constant) between the number of trapped holes annealed and the number of interface states generated

Keywords

X-ray effects; annealing; hole traps; insulated gate field effect transistors; interface electron states; semiconductor device models; semiconductor device testing; MOS device response; X-ray irradiation; interface states build-up; low-dose-rate; nMOSFET; oxide trapped hole annealing; pMOSFET; phenomenological basis; positive oxide charge anneal; slow interface states; space environments; three point method; trapped hole conversion models; Annealing; Convolution; Equations; Hydrogen; Interface states; MOS devices; Microelectronics; Physics; Testing; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.273488

Filename

273488