Title :
Three-point method of prediction of MOS device response in space environments
Author :
Pershenkov, V.S. ; Belyakov, V.V. ; Cherepko, S.V. ; Shvetzov-Shilovsky, I.N.
Author_Institution :
Dept. of Microelectron., Moscow Phys. Eng. Inst., Russia
fDate :
12/1/1993 12:00:00 AM
Abstract :
A method for low-dose-rate MOS device response prediction based on the linear dependence between positive oxide charge anneal and interface states build-up is presented and experimentally verified. A linear relationship is seen to exist between the build-up of slow interface states and oxide trapped hole annealing. The physical explanation of the correlation between the number of trapped holes annealed and the number of interface states generated can be given in both hydrogen and trapped hole conversion models on a phenomenological basis. It is suggested that there is a one-to-KOi relationship (where KOi is some phenomenological constant) between the number of trapped holes annealed and the number of interface states generated
Keywords :
X-ray effects; annealing; hole traps; insulated gate field effect transistors; interface electron states; semiconductor device models; semiconductor device testing; MOS device response; X-ray irradiation; interface states build-up; low-dose-rate; nMOSFET; oxide trapped hole annealing; pMOSFET; phenomenological basis; positive oxide charge anneal; slow interface states; space environments; three point method; trapped hole conversion models; Annealing; Convolution; Equations; Hydrogen; Interface states; MOS devices; Microelectronics; Physics; Testing; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
