DocumentCode :
1041423
Title :
Single event upset test structures for digital CMOS application specific integrated circuits
Author :
Baze, M.P. ; Bartholet, W.G. ; Braatz, J.C. ; Dao, T.A.
Author_Institution :
Boeing Defense & Space Group, Seattle, WA, USA
Volume :
40
Issue :
6
fYear :
1993
fDate :
12/1/1993 12:00:00 AM
Firstpage :
1703
Lastpage :
1708
Abstract :
A test structure methodology for digital CMOS ASICs (application-specific integrated circuits) that can be used to evaluate the hardness of various ASIC libraries and processes is described. The method identifies categories of ASIC cells and uses a select set of worst-case test structures to obtain the parameters necessary to evaluate a library and process, and make a tractable, bounded estimate of the expected chip hardness. In addition, if the error rates prove to be excessive, this method helps identify the cells in which hardening efforts will be most productive. This approach minimizes the number of test structures required by categorizing ASIC library cells according to their SEU (single event upset) response and designing a structure to characterize each response for each category. These methods are being applied in the development of ASIC options for hardened chip design and have already been used to design an SEU hardened ASIC controller
Keywords :
CMOS integrated circuits; application specific integrated circuits; digital integrated circuits; integrated circuit testing; radiation hardening (electronics); ASIC cells; ASIC controller; ASIC library hardness evaluation; SEU response; SEU test structures; application specific integrated circuits; chip hardness; digital CMOS ASICs; error rates; hardened chip design; test structure methodology; worst-case test structures; Application specific integrated circuits; CMOS digital integrated circuits; Circuit testing; Costs; Fabrication; Integrated circuit testing; Logic; Single event upset; Software libraries; Uncertainty;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.273490
Filename :
273490
Link To Document :
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