Title :
Thermal noise in the hot electron regime in FET´s
Author :
van der Ziel, A.
fDate :
10/1/1971 12:00:00 AM
Abstract :
Klaassen has given two different formulas for the thermal noise in the conducting channel of FETs in the hot electron regime. It is shown that the first published formula is formally correct. A discussion is given of the equivalent noise temperature of the hot electrons.
Keywords :
Conductors; Diodes; Electrons; FETs; Gunn devices; Noise measurement; Solid state circuits; Tellurium; Temperature; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1971.17315
