Title :
Heavy ion and proton analysis of a GaAs C-HIGFET SRAM
Author :
Cutchin, J.H. ; Marshall, P.W. ; Weatherford, T.R. ; Langworthy, J. ; Petersen, E.L. ; Campbell, A.B. ; Hanka, Steve ; Peczalski, Andy
Author_Institution :
SFA Inc., Landover, MD, USA
fDate :
12/1/1993 12:00:00 AM
Abstract :
The authors present heavy-ion and proton upset measurements, including total dose and displacement damage, on a one-micron, GaAs, complementary-heterostructure insulated-gate FET (C-HIGFET) 1k×1k static random-access memory (SRAM). Single event upset (SEU) characteristics show a two-order-of-magnitude improvement over GaAs MESFET technology. Heavy-ion upset equilibrium measurements show that all cells upset with equal probability at the 5% linear energy transfer (LET) threshold. This indicates that for this device the shape of the cross section versus LET curve is a result of a probability distribution that applies to all cells and is not the result of variations in cell sensitivities. The data set also indicates that the traditional two-dimensional cos(θ) normalization to LET and fluence is not applicable to this technology
Keywords :
III-V semiconductors; SRAM chips; field effect integrated circuits; gallium arsenide; integrated circuit testing; ion beam effects; proton effects; 1 kbit; GaAs; GaAs C-HIGFET SRAM; LET threshold; SEU; complementary-heterostructure insulated-gate FET; displacement damage; heavy ion upset; linear energy transfer; probability distribution; proton analysis; proton upset; single event upset; total dose; Displacement measurement; Energy exchange; Energy measurement; FETs; Gallium arsenide; Insulation; MESFETs; Protons; Random access memory; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
