• DocumentCode
    1041501
  • Title

    Charge-coupled imaging devices: Design considerations

  • Author

    Amelio, Gilbert F. ; Bertram, Walter J., Jr. ; Tompsett, Michael F.

  • Author_Institution
    Bell Telephone Laboratories, Inc., Murray Hill, N. J.
  • Volume
    18
  • Issue
    11
  • fYear
    1971
  • fDate
    11/1/1971 12:00:00 AM
  • Firstpage
    986
  • Lastpage
    992
  • Abstract
    In this paper some of the parameters relevant to the design of charge-coupled imaging devices are considered. Among these are charge storage capability, transfer efficiency, charge conservation, dark current, and the anticipated signal-to-noise ratio. Each is discussed, and the resultant effects on the performance of imaging devices are investigated.
  • Keywords
    Charge carrier processes; Dark current; Electrodes; Helium; Insulation; Optical imaging; Potential well; Semiconductor diodes; Signal to noise ratio; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1971.17320
  • Filename
    1476642
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1041501