A 1.5 × 105bit low-current high-speed planar-magnetic-film memory with high-storage density

The access and cycle time limits and storage capacity limits of a DRO memory with planar magnetic films are estimated. Basing on these estimates, the concept of a magnetic-film memory of high-storage density is developed which operates on low-drive currents and allows high operating speeds. The magnetic films, the storage element structure, and the drive lines required for realizing the memory plane are treated. Data of a realized feasibility model, which deviate from conventional values (word line period 200 μm, digit line period 300 μm, nominal word current 120 mA, nominal digit current 32 mA, delay times on the lines of the plane 3 ns for a storage capacity of 1024 words of 144 bits each) are explained. The memory electronics and the status of development are reviewed.