Total dose effect on ferroelectric PZT capacitors used as non-volatile storage elements

Author

Moore, R.A. ; Benedetto, J. ; Rod, B.J.

Author_Institution

US Army Res. Lab., Adelphi, MD, USA

Volume

40

Issue

6

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

1591

Lastpage

1596

Abstract

The effects of ionizing radiation on the retained polarization of lead zirconate titanate (PZT) thin films are examined. The retained polarization is the key parameter in measuring the radiation tolerance of the PZT storage element in a nonvolatile memory. Data from the retained polarization measurement show a larger radiation-induced degradation that has generally been reported using the traditional hysteresis loop method for measuring remanent polarization. It appears that the difference is due in part to a cycling-induced annealing effect during the hysteresis loop measurement

Keywords

X-ray effects; annealing; dielectric hysteresis; dielectric polarisation; electron device testing; ferroelectric storage; lead compounds; thin film capacitors; PbZrO3TiO3; X-ray irradiation; cycling-induced annealing effect; ferroelectric PZT capacitors; hysteresis loop measurement; ionizing radiation; nonvolatile memory; radiation tolerance; radiation-induced degradation; retained polarization; thin films; total dose effect; Annealing; Capacitors; Degradation; Ferroelectric materials; Hysteresis; Ionizing radiation; Nonvolatile memory; Polarization; Titanium compounds; Transistors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.273502

Filename

273502