DocumentCode :
1041572
Title :
Silicon electron multiplication (SEM) camera tube
Author :
Miyashiro, Shoichi ; Shirouzu, Shunji
Author_Institution :
Tokyo Shibaura Electric Company, Ltd., Kawasaki, Japan
Volume :
18
Issue :
11
fYear :
1971
fDate :
11/1/1971 12:00:00 AM
Firstpage :
1023
Lastpage :
1028
Abstract :
A low-light-level television camera tube has been realized, which incorporates a silicon electron multiplication (SEM) target. Image electrons liberated from the photocathode bombard the target, causing an electronic amplification of several thousand, as well as electronic charge storage. The SEM tube shows a limiting sensitivity at photocathode illumination on the order of 10-5lx, and approaches the picture degradation problem due to quantum fluctuation. Further degradation of the picture is observed by addition of an image intensifier tube to the SEM tube, and also in the case of an X-ray image pickup using the SEM camera with phosphor screen. The SEM tube can scarcely be injured by the exposure to a strong light.
Keywords :
Cameras; Cathodes; Degradation; Electron tubes; Fluctuations; Image intensifiers; Image storage; Lighting; Silicon; TV;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1971.17326
Filename :
1476648
Link To Document :
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