DocumentCode
1041572
Title
Silicon electron multiplication (SEM) camera tube
Author
Miyashiro, Shoichi ; Shirouzu, Shunji
Author_Institution
Tokyo Shibaura Electric Company, Ltd., Kawasaki, Japan
Volume
18
Issue
11
fYear
1971
fDate
11/1/1971 12:00:00 AM
Firstpage
1023
Lastpage
1028
Abstract
A low-light-level television camera tube has been realized, which incorporates a silicon electron multiplication (SEM) target. Image electrons liberated from the photocathode bombard the target, causing an electronic amplification of several thousand, as well as electronic charge storage. The SEM tube shows a limiting sensitivity at photocathode illumination on the order of 10-5lx, and approaches the picture degradation problem due to quantum fluctuation. Further degradation of the picture is observed by addition of an image intensifier tube to the SEM tube, and also in the case of an X-ray image pickup using the SEM camera with phosphor screen. The SEM tube can scarcely be injured by the exposure to a strong light.
Keywords
Cameras; Cathodes; Degradation; Electron tubes; Fluctuations; Image intensifiers; Image storage; Lighting; Silicon; TV;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1971.17326
Filename
1476648
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