• DocumentCode
    1041572
  • Title

    Silicon electron multiplication (SEM) camera tube

  • Author

    Miyashiro, Shoichi ; Shirouzu, Shunji

  • Author_Institution
    Tokyo Shibaura Electric Company, Ltd., Kawasaki, Japan
  • Volume
    18
  • Issue
    11
  • fYear
    1971
  • fDate
    11/1/1971 12:00:00 AM
  • Firstpage
    1023
  • Lastpage
    1028
  • Abstract
    A low-light-level television camera tube has been realized, which incorporates a silicon electron multiplication (SEM) target. Image electrons liberated from the photocathode bombard the target, causing an electronic amplification of several thousand, as well as electronic charge storage. The SEM tube shows a limiting sensitivity at photocathode illumination on the order of 10-5lx, and approaches the picture degradation problem due to quantum fluctuation. Further degradation of the picture is observed by addition of an image intensifier tube to the SEM tube, and also in the case of an X-ray image pickup using the SEM camera with phosphor screen. The SEM tube can scarcely be injured by the exposure to a strong light.
  • Keywords
    Cameras; Cathodes; Degradation; Electron tubes; Fluctuations; Image intensifiers; Image storage; Lighting; Silicon; TV;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1971.17326
  • Filename
    1476648