• DocumentCode
    1041760
  • Title

    hFEfalloff at low temperatures

  • Author

    Gopen, Howard J. ; Yu, Albert Y C

  • Author_Institution
    Intel Corporation, Mountain View, Calif.
  • Volume
    18
  • Issue
    12
  • fYear
    1971
  • fDate
    12/1/1971 12:00:00 AM
  • Firstpage
    1146
  • Lastpage
    1148
  • Abstract
    It is shown that for shallow planar bipolar transistors, tunneling, currents through the emitter-base junction can cause pronounced hFEfalloff at low temperatures.
  • Keywords
    Bipolar transistors; Cameras; Helium; Instruments; Iron; Laboratories; Microwave transistors; Research and development; Temperature dependence; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1971.17345
  • Filename
    1476667
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1041760