Low temperature proton irradiation of GaAs MESFETs

Author

Shaw, G.J. ; Xapsos, M.A. ; Weaver, B.D. ; Summers, G.P.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

40

Issue

6

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

1300

Lastpage

1306

Abstract

GaAs MESFETs and resistors were irradiated with 3 MeV protons at irradiation temperatures (T_IRR) in the 100 K⩽T_IRR⩽300 K range. It was found that irradiation at T_IRR⩽225 K was about 2.5 times more effective at degrading the DC electrical parameters of the MESFETs than irradiation at room temperature. Isochronal annealing experiments showed that there was no apparent recovery of the radiation-induced degradation for annealing temperatures below 225 K. Both the MESFETs and the resistors exhibited a broad annealing stage near 270 K. The implications for spaceborne GaAs devices operating at cryogenic temperatures are discussed

Keywords

III-V semiconductors; Schottky gate field effect transistors; annealing; gallium arsenide; proton effects; semiconductor device testing; 100 to 300 K; 3 MeV; DC electrical parameters; GaAs; III-V semiconductor; MESFETs; cryogenic temperatures; isochronal annealing; low temperature; proton irradiation; radiation-induced degradation; spaceborne devices; Annealing; Cryogenics; Doping; FETs; Gallium arsenide; Laboratories; MESFETs; Protons; Resistors; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.273538

Filename

273538