Impact ionization in bulk GaAs high field domain

Author

Bohn, Peter P. ; Herskowitz, Gerald J.

Author_Institution

Stevens Institute of Technology, Hoboken, N. J.

Volume

19

Issue

1

fYear

1972

fDate

1/1/1972 12:00:00 AM

Firstpage

14

Lastpage

21

Abstract

An investigation of impact ionization in the high field domains of GaAs Gunn effect devices has been carried out. A method of measuring the number of excess electrons generated per domain transit was developed, based on the measurement of the increase in the valley current from one domain transit to the next while impact ionization is occurring in the domain. This method was used to experimentally determine the carrier generation per domain transit $\\Delta n/n_{0}$ as a function of excess domain potential VDfor three material carrier concentrations. These results are compared to a theoretical calculation of $\\Delta n/n_{0}$ based upon an approximate solution of the continuity equation and invariant domain calculations. The experimental and theoretical results agree to within 2 percent for $n_{0} = 3 \\times 10^{14}$ cm^-3and 6 percent for $n_{0} = 4 \\times 10^{14}$ cm^-3.

Keywords

Avalanche breakdown; Breakdown voltage; Charge carrier processes; Current measurement; Electron traps; Equations; Gallium arsenide; Gunn devices; Helium; Impact ionization;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1972.17365

Filename

1476836