• DocumentCode
    1041993
  • Title

    Random telegraph signals from proton-irradiated CCDs

  • Author

    Hopkins, I.H. ; Hopkinson, G.R.

  • Volume
    40
  • Issue
    6
  • fYear
    1993
  • fDate
    12/1/1993 12:00:00 AM
  • Firstpage
    1567
  • Lastpage
    1574
  • Abstract
    It has been shown that proton-induced defects in charge couple devices (CCDs) can demonstrate the classic phenomenology of random telegraph signals (RTSs). These fluctuations take the form of RTSs with well-defined amplitudes and time constants for the high and low dark current states. The time constants are strongly temperature-activated and the evidence suggests the presence of a bistable defect whose structural reconfigurations cause changes in the dark current. Though an important noise source for room-temperature systems, the RTS pulse width is increased on cooling and the effect is not likely to be important below ~-20°C. Annealing of the RTS defect was found to occur at ~100°C
  • Keywords
    CCD image sensors; current fluctuations; proton effects; radiation hardening (electronics); random noise; semiconductor device noise; annealing; bistable defect; dark current states; fluctuations; proton-induced defects; proton-irradiated CCDs; random telegraph signals; time constants; Annealing; Charge coupled devices; Dark current; Fluctuations; Protons; Telegraphy; Temperature dependence; Temperature distribution; Temperature sensors; Working environment noise;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.273552
  • Filename
    273552