Title :
Random telegraph signals from proton-irradiated CCDs
Author :
Hopkins, I.H. ; Hopkinson, G.R.
fDate :
12/1/1993 12:00:00 AM
Abstract :
It has been shown that proton-induced defects in charge couple devices (CCDs) can demonstrate the classic phenomenology of random telegraph signals (RTSs). These fluctuations take the form of RTSs with well-defined amplitudes and time constants for the high and low dark current states. The time constants are strongly temperature-activated and the evidence suggests the presence of a bistable defect whose structural reconfigurations cause changes in the dark current. Though an important noise source for room-temperature systems, the RTS pulse width is increased on cooling and the effect is not likely to be important below ~-20°C. Annealing of the RTS defect was found to occur at ~100°C
Keywords :
CCD image sensors; current fluctuations; proton effects; radiation hardening (electronics); random noise; semiconductor device noise; annealing; bistable defect; dark current states; fluctuations; proton-induced defects; proton-irradiated CCDs; random telegraph signals; time constants; Annealing; Charge coupled devices; Dark current; Fluctuations; Protons; Telegraphy; Temperature dependence; Temperature distribution; Temperature sensors; Working environment noise;
Journal_Title :
Nuclear Science, IEEE Transactions on