Improved four-channel direct-conversion SiGe receiver IC for UMTS base stations

Author

Karthaus, Udo ; Gruson, Frank ; Bergmann, Günther ; Pascht, Andreas

Author_Institution

Atmel Germany GmbH, Heilbronn, Germany

Volume

14

Issue

8

fYear

2004

Firstpage

377

Lastpage

379

Abstract

This work presents the design and measurement results of an improved four-channel, direct down conversion receiver (DCR) for the application in universal mobile telecommunications system base stations. The whole analog receiver functionality including low noise amplifier, variable gain amplifier, local oscillator frequency divider, in-phase and quadrature DCR mixers and seventh-order active lowpass filter is integrated using Atmel´s 50-GHz f_t, 50-GHz f_max SiGe foundry technology (Atmel, 1998). Important cascaded design parameters of the fully ESD-protected device are a noise figure 1.5 to 2 dB; IIP3 (third-order intercept point) -20.3 to -15.8 dBm and a voltage gain of 51 to 57 dB into a 1000-Ω || 2.5-pF differential load [analog to digital converter].

Keywords

3G mobile communication; BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; active filters; frequency dividers; low-pass filters; microwave receivers; radio receivers; semiconductor materials; 1.5 to 2 dB; 2.5 pF; 50 GHz; 51 to 578 dB; SiGe; UHF bipolar integrated circuits; UHF receivers; UMTS base stations; active filters; analog receiver functionality; analog to digital converter; differential load; direct down conversion receiver; direct-conversion SiGe receiver IC; four-channel SiGe receiver IC; in-phase DCR mixers; local oscillator frequency divider; noise amplifier; quadrature DCR mixers; seventh-order active lowpass filter; universal mobile telecommunications system; variable gain amplifier; wideband code division multiple access; 3G mobile communication; Active noise reduction; Base stations; Frequency conversion; Gain; Germanium silicon alloys; Integrated circuit noise; Local oscillators; Low-noise amplifiers; Silicon germanium; Active filters; UHF bipolar integrated circuits; UHF receivers; W-CDMA; silicon germanium; wideband code division multiple access;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2004.832632

Filename

1316914