Title :
One gigarad passivating nitrided oxides for 100% internal quantum efficiency silicon photodiodes
Author :
Korde, Runa ; Cable, J.S. ; Canfield, L. Randall
Author_Institution :
Int. Radiat. Detectors, Torrance, CA, USA
fDate :
12/1/1993 12:00:00 AM
Abstract :
100% internal quantum efficiency silicon photodiodes with 4- to 8-nm passivating silicon dioxide have been fabricated by rapid thermal nitridation in nitrous oxide and ammonia ambients with the aim of increasing their radiation hardness. The fabricated diodes were exposed to 10.2-eV photons using a hydrogen plasma light source and a normal incidence monochromator. The measured quantum efficiency degradation indicates that the interface trap area density increases sublinearly with dose up to a measured dose of 1 Grad. No noticeable change in quantum efficiency over the range of 50 to 250 nm was observed after exposure to 100% relative humidity. This suggests that the nitrided Si-SiO2 interface is practically insensitive to moisture
Keywords :
elemental semiconductors; interface electron states; nitridation; passivation; photodiodes; radiation effects; radiation hardening (electronics); rapid thermal processing; semiconductor device testing; silicon; 10.2 eV; 109 rad; 4 to 8 nm; H2 plasma; N2O; NH3; Si photodiodes; Si-SiO2 interface; Si-SiOxNy; XUV photons; interface trap area density; internal quantum efficiency; normal incidence monochromator; passivating nitrided oxides; quantum efficiency degradation; radiation hardness; rapid thermal nitridation; Area measurement; Density measurement; Diodes; Hydrogen; Light sources; Photodiodes; Plasma density; Plasma measurements; Plasma sources; Silicon compounds;
Journal_Title :
Nuclear Science, IEEE Transactions on
