• DocumentCode
    1042130
  • Title

    Buckling of thermally-grown SiO2thin films

  • Author

    Wilmsen, C.W.

  • Volume
    19
  • Issue
    1
  • fYear
    1972
  • fDate
    1/1/1972 12:00:00 AM
  • Firstpage
    122
  • Lastpage
    122
  • Abstract
    The difference in thermal expansion causes compression in SiO2thermally grown on Si wafers. Unsupported windows of SiO2buckle if the oxide thickness/window width ratio (t/w) is too small. This correspondence presents the experimentally determined t/w ratio for stable films.
  • Keywords
    Boundary conditions; Capacitive sensors; Etching; Hafnium; Optical films; Optical interferometry; Photonic band gap; Silicon; Temperature; Thermal expansion;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1972.17381
  • Filename
    1476852
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1042130