Title :
Buckling of thermally-grown SiO2thin films
fDate :
1/1/1972 12:00:00 AM
Abstract :
The difference in thermal expansion causes compression in SiO2thermally grown on Si wafers. Unsupported windows of SiO2buckle if the oxide thickness/window width ratio (t/w) is too small. This correspondence presents the experimentally determined t/w ratio for stable films.
Keywords :
Boundary conditions; Capacitive sensors; Etching; Hafnium; Optical films; Optical interferometry; Photonic band gap; Silicon; Temperature; Thermal expansion;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1972.17381
