Title :
GaAs planar Gunn diodes for DC-biased operation
Author :
Takeuchi, M. ; Higashisaka, A. ; Sekido, K.
Author_Institution :
Nippon Electric Company, Ltd., Kawasaki, Japan
fDate :
1/1/1972 12:00:00 AM
Abstract :
The difficulty in obtaining CW oscillations in GaAs planar Gunn diodes has been found to be due to distortion of the field distribution by a field-enhanced trapping effect. A tapered active region is proposed to compensate for the effect due to the trapping. By adopting the geometry, coherent CW Gunn oscillations have been obtained successfully with reasonable reproducibility.
Keywords :
Aging; Diodes; Doping profiles; Fabrication; Gallium arsenide; Gunn devices; Packaging; Radio frequency; Statistics; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1972.17383
