Ultrashort optical pulse generation with a mode-locked long-wavelength (1075-1085 nm) InGaAs-GaAs semiconductor laser

Author

Brennan, M.J. ; Budz, A.J. ; Robinson, B.J. ; Mascher, P. ; Haugen, H.K.

Author_Institution

Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada

Volume

16

Issue

8

fYear

2004

Firstpage

1798

Lastpage

1800

Abstract

Optical pulses are generated by passive and hybrid mode-locking of a long wavelength (1075-1085 nm) InGaAs-GaAs ridge waveguide laser grown by gas source molecular beam epitaxy. The devices are fabricated with two sections, one of which contains a bend in the waveguide for coupling to an external linear cavity. Pulses 2-5 ps in duration have been generated with average powers ranging from 750 μW to 1.8 mW. Pulse compression yields durations as short as 570 fs. Post amplification with a narrow stripe InGaAs-GaAs semiconductor optical amplifier increases the average output power up to 13 mW.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared spectra; laser cavity resonators; laser mode locking; molecular beam epitaxial growth; optical couplers; optical fabrication; optical pulse compression; optical pulse generation; quantum well lasers; semiconductor growth; semiconductor optical amplifiers; waveguide lasers; 1075 to 1085 nm; 2 to 5 ps; 570 fs; 750 to 1800 muW; InGaAs-GaAs; external linear cavity; gas source molecular beam epitaxy; mode-locked long-wavelength laser; optical coupling; optical waveguide; pulse compression; ridge waveguide laser; semiconductor laser; semiconductor optical amplifier; ultrashort optical pulse generation; Gas lasers; Laser mode locking; Optical pulse generation; Optical pulses; Optical waveguides; Power generation; Pulse amplifiers; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.831320

Filename

1316927