Study on InGaAsP-InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure

Author

Duchang Heo ; Il Ki Han ; Jung Il Lee ; Jichai Jeong

Author_Institution

Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea

Volume

16

Issue

8

fYear

2004

Firstpage

1801

Lastpage

1803

Abstract

We studied symmetric and asymmetric InGaAsP-InGaAs 1.55-μm multiquantum-well (MQW) laser diodes (LDs) with highly p-doped layers in the two-step separate confinement heterostructure (SCH). The p-doping in p-SCH suppresses the electron overflow from the MQWs to p-SCH, but it is an origin of free carrier absorption loss. An additional InGaAsP layer inserted inside n-SCH makes asymmetric field distribution and, therefore, reduces the portion of optical field distribution in highly p-doped regions with high optical loss. Compared with symmetric structure, asymmetric SCH LD has low threshold current density, low internal loss, and high and flat slope efficiency with respect to temperature.

Keywords

III-V semiconductors; doping profiles; gallium arsenide; gallium compounds; indium compounds; optical losses; quantum well lasers; semiconductor quantum wells; 1.55 mum; InGaAsP-InGaAs; asymmetric separate confinement heterostructure; electron overflow; free carrier absorption loss; multiquantum-well laser diodes; optical field distribution; optical loss; p-doping; symmetric separate confinement heterostructure; Absorption; Carrier confinement; Diode lasers; Electron optics; Optical losses; Optical saturation; Optical waveguides; Quantum well devices; Temperature; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.829772

Filename

1316928