Title :
Mode beating noise reduction of mutually injection-locked erbium-doped fiber laser and laser diode link
Author :
Lin, Yu-Huang ; Lin, Gong-Ru
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Taiwan
Abstract :
We report a mutually injection-locked erbium-doped fiber amplifier (or laser) and Fabry-Pe´rot laser diode link (EDFA-FPLD or EDFL-FPLD) for single longitudinal mode lasing with linewidth of 0.012 nm and sidemode suppression ratio of 42 dB. The 3-dB linewidths of <20 MHz and 350 kHz for the EDFL-FPLD and EDFA-FPLD links, respectively, are reported using interferometric determination. The mode-beating noise can be completely eliminated in the EDFA-FPLD link.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser mode locking; molecular beam epitaxial growth; optical fabrication; optical fibre communication; optical pulse compression; optical pulse generation; ridge waveguides; semiconductor optical amplifiers; waveguide lasers; 1075 to 1085 nm; 13 mW; 2 to 5 ps; 570 fs; 750 muW to 1.8 mW; InGaAs-GaAs; InGaAs-GaAs ridge waveguide laser; InGaAs-GaAs semiconductor optical amplifier; external linear cavity; gas source molecular beam epitaxy; hybrid mode-locking; mode-locked long-wavelength InGaAs-GaAs semiconductor laser; optical pulses; passive mode-locking; post amplification; pulse compression; ultrashort optical pulse generation; waveguide bend; Diode lasers; Erbium-doped fiber amplifier; Erbium-doped fiber lasers; Laser feedback; Laser modes; Laser noise; Noise reduction; Optical feedback; Optical noise; Semiconductor device noise;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.829770
