Title :
Experimental Evidence of the Fast and Slow Charge Trapping/Detrapping Processes in High- k Dielectrics Subjected to PBTI Stress
Author :
Heh, Dawei ; Young, Chadwin D. ; Bersuker, Gennadi
Author_Institution :
SEMATECH, Austin, TX
Abstract :
A single-pulse technique, with a wide range of pulse times, has been applied to study positive bias temperature instability in high-k nMOSFETs. It is shown that the charging phenomenon includes both fast and slow electron trapping processes with rather well-defined characteristic times, which differ by six orders of magnitude. On the other hand, the poststress charge relaxation cannot be described by a simple detrapping process, which makes identifying the dominant detrapping mechanism complicated.
Keywords :
MOSFET; electrodes; electron traps; hafnium compounds; high-k dielectric thin films; transients; CMOS process; HfO2-SiO2; TiN-Si; detrapping process; fast electron trapping process; gate dielectric stack; gate electrode; hafnium-based dielectrics; high-k nMOSFETs; positive bias temperature instability; single-pulse technique; slow electron trapping process; transient charge; Dielectric measurements; Electron traps; High K dielectric materials; High-K gate dielectrics; MOSFETs; Stress measurement; Temperature dependence; Temperature sensors; Threshold voltage; Time measurement; Discharge; electron trapping; high- k; single pulse; transient charge;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.914088
