High-Speed GaN-Based Green Light-Emitting Diodes With Partially n-Doped Active Layers and Current-Confined Apertures

Author

Shi, J.-W. ; Sheu, J.-K. ; Chen, C.-H. ; Lin, G.-R. ; Lai, W.-C.

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Taoyuan

Volume

29

Issue

2

fYear

2008

Firstpage

158

Lastpage

160

Abstract

We demonstrate a high-speed GaN-based green light-emitting diode for plastic optical fiber (POF) communication applications. By using a combination of n-type doping and undoped In_xGa_1-xN/GaN based multiple quantum wells (MQWs), and a 76-mum-diameter current-confined aperture structure, we can obtain an extremely high electrical-to-optical (E-O) 3 dB bandwidth (~330 MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (-264 muW) can be simultaneously achieved for a 2 mm in diameter POF with a 0.5 numerical aperture (NA).

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors; In_xGa_1-xN-GaN; current-confined apertures; green light-emitting diodes; multiple quantum wells; n-doped active layers; plastic optical fiber communication; recombination lifetime; size 2 mm; size 76 mum; Apertures; Bandwidth; Doping; Gallium nitride; Light emitting diodes; Optical fibers; Plastics; Quantum well devices; Radiative recombination; Ultraviolet sources; GaN; LED; optical fiber;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.914070

Filename

4435979